Mitsubishi Electric Corp, based in Tokyo, has unveiled a new structure for a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC-MOSFET) embedded with a Schottky barrier diode (SBD) at the 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023) in Hong Kong.

The company has applied this new structure in the FMF 800 DC-66 BEW 3.3kV full-SiC power module, which is designed for large industrial equipment like railways and DC power systems. The chip's innovative structure is expected to contribute to downsizing and improving the energy efficiency of railway traction systems while promoting the adoption of DC power transmission for carbon neutrality.

Compared to conventional methods using separate chips, the integration of a SiC-MOSFET and a SiC-SBD in a single chip allows for more compact modules, increased capacity, and reduced switching loss. Mitsubishi Electric's new chip structure enables surge current to be distributed evenly among parallel-connected chips within the power module, significantly improving the module's surge-current capacity. This breakthrough technology opens up possibilities for the practical application of power modules with SBD-embedded SiC-MOSFETs in various industrial equipment, including railways and electric power systems.

Source: semiconductor-today.com